Vishay
IRFBF30
Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFBF30 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.7R
RoHS Compliant
No
Turn-Off Delay Time
90ns
Turn-On Delay Time
14ns
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFBF30 Datasheet
Download the complete datasheet for Vishay IRFBF30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.