
N-channel power transistor in a D2PAK surface-mount package. Features a 900V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3.6A. Offers a low on-resistance (Rds On Max) of 3.7 Ohms. Includes fast switching characteristics with a 14ns turn-on delay and 30ns fall time. Maximum power dissipation is 125W, with operating temperatures ranging from -55°C to 150°C.
Vishay IRFBF30S technical specifications.
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