N-channel power MOSFET for general-purpose applications. Features 900V drain-source voltage and 3.6A continuous drain current. Offers 3.7 ohm drain-source resistance and 125W maximum power dissipation. Packaged in a D2PAK surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFBF30SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFBF30SPBF Datasheet
Download the complete datasheet for Vishay IRFBF30SPBF to view detailed technical specifications.
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