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Technical Specifications
Vishay IRFBG30PbF technical specifications.
General
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
1000V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3.1A
Maximum Drain Source Resistance
5000@10VmOhm
Typical Gate Charge @ Vgs
80(Max)@10VnC
Typical Gate Charge @ 10V
80(Max)nC
Typical Input Capacitance @ Vds
980@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Pin Count
3
Package/Case
TO-220AB
Package Family Name
TO-220
Compliance
RoHS
Yes
RoHS Version
2011/65/EU, 2015/863
Datasheet
Vishay IRFBG30PbF Datasheet
Download the complete datasheet for Vishay IRFBG30PbF to view detailed technical specifications.
No datasheet is available for this part.