N-channel MOSFET transistor featuring 50V drain-source voltage and 2.4A continuous drain current. Offers a low drain-source on-resistance of 100mΩ maximum. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. This through-hole component is housed in a DIP package and is RoHS compliant.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD020PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 8.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD020PBF Datasheet
Download the complete datasheet for Vishay IRFD020PBF to view detailed technical specifications.
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