N-channel MOSFET transistor featuring 50V drain-source voltage and 2.4A continuous drain current. Offers a low drain-source on-resistance of 100mΩ maximum. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. This through-hole component is housed in a DIP package and is RoHS compliant.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD020PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
2.4A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
100mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
400pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
16ns
Turn-On Delay Time
8.7ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD020PBF Datasheet
Download the complete datasheet for Vishay IRFD020PBF to view detailed technical specifications.
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