N-Channel Power MOSFET, 60V Vdss, 2.5A continuous drain current. Features 0.1ohm drain-to-source resistance, 1.3W power dissipation, and 640pF input capacitance. Operates from -55°C to 175°C with a gate-to-source voltage rating of 20V. Packaged in DIP for through-hole mounting.
PackageDIP
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD024 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
640pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
DC Rated Voltage
60V
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD024 Datasheet
Download the complete datasheet for Vishay IRFD024 to view detailed technical specifications.
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