N-Channel Power MOSFET, 60V Vdss, 2.5A continuous drain current. Features 0.1ohm drain-to-source resistance, 1.3W power dissipation, and 640pF input capacitance. Operates from -55°C to 175°C with a gate-to-source voltage rating of 20V. Packaged in DIP for through-hole mounting.
PackageDIP
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD024 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 640pF |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 60V |
| Width | 6.29mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFD024 Datasheet
Download the complete datasheet for Vishay IRFD024 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.