N-channel Silicon Field-Effect Transistor (FET) designed for small signal applications. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 1A. Offers a maximum drain-source on-resistance of 540mΩ. Operating temperature range spans from -55°C to 175°C with a power dissipation of 1.3W. Packaged in a TO-250AA (HEXDIP-4) through-hole mount configuration.
PackageDIP
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFD110 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
180pF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD110 Datasheet
Download the complete datasheet for Vishay IRFD110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
