N-channel JFET with 100V drain-source breakdown voltage and 1A continuous drain current. Features 540mΩ maximum drain-source on-resistance and 1.3W power dissipation. This through-hole mounted component offers a 16ns fall time and 6.9ns turn-on delay time, operating from -55°C to 175°C. The HEXDIP-4 package is RoHS compliant.
PackageDIP
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD110PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Dual Supply Voltage | 100V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.3W |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Row Spacing | 7.62mm |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| DC Rated Voltage | 100V |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD110PBF Datasheet
Download the complete datasheet for Vishay IRFD110PBF to view detailed technical specifications.
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