N-channel JFET with 100V drain-source breakdown voltage and 1A continuous drain current. Features 540mΩ maximum drain-source on-resistance and 1.3W power dissipation. This through-hole mounted component offers a 16ns fall time and 6.9ns turn-on delay time, operating from -55°C to 175°C. The HEXDIP-4 package is RoHS compliant.
PackageDIP
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD110PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Dual Supply Voltage
100V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
180pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.3W
Rds On Max
540mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Row Spacing
7.62mm
Threshold Voltage
4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.9ns
DC Rated Voltage
100V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD110PBF Datasheet
Download the complete datasheet for Vishay IRFD110PBF to view detailed technical specifications.
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