N-Channel Power MOSFET with 100V Drain-Source Voltage and 1.3A Continuous Drain Current. Features a low 270mΩ Drain-Source On-Resistance and 6.8ns typical turn-on delay. Operates across a wide temperature range of -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a through-hole DIP with a 2.54mm lead pitch.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD120 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 360pF |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Row Spacing | 7.62mm |
| Termination | Through Hole |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6.8ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFD120 Datasheet
Download the complete datasheet for Vishay IRFD120 to view detailed technical specifications.
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