N-Channel Silicon JFET transistor for small signal applications. Features a 200V drain-to-source breakdown voltage and 600mA continuous drain current. Offers a low drain-to-source resistance of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a TO-250AA (DIP) through-hole mount configuration.
PackageDIP
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD210 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
600mA
Current Rating
600mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
200V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.5R
RoHS Compliant
No
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.2ns
DC Rated Voltage
200V
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD210 Datasheet
Download the complete datasheet for Vishay IRFD210 to view detailed technical specifications.
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