N-Channel Silicon JFET transistor for small signal applications. Features a 200V drain-to-source breakdown voltage and 600mA continuous drain current. Offers a low drain-to-source resistance of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a TO-250AA (DIP) through-hole mount configuration.
PackageDIP
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD210 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 600mA |
| Current Rating | 600mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 140pF |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.2ns |
| DC Rated Voltage | 200V |
| Width | 6.29mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFD210 Datasheet
Download the complete datasheet for Vishay IRFD210 to view detailed technical specifications.
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