N-Channel Silicon JFET, DIP package, featuring 250V Drain-to-Source Voltage (Vdss) and 450mA Continuous Drain Current (ID). This single-element transistor offers a low Drain-to-Source Resistance (Rds On) of 2 Ohms. With a 1W maximum power dissipation and operating temperature range from -55°C to 150°C, it is designed for through-hole mounting. Key switching characteristics include a 7ns turn-on delay and 7.6ns fall time.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD214 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
450mA
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Fall Time
7.6ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD214 Datasheet
Download the complete datasheet for Vishay IRFD214 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.