N-Channel Silicon JFET, DIP package, featuring 250V Drain-to-Source Voltage (Vdss) and 450mA Continuous Drain Current (ID). This single-element transistor offers a low Drain-to-Source Resistance (Rds On) of 2 Ohms. With a 1W maximum power dissipation and operating temperature range from -55°C to 150°C, it is designed for through-hole mounting. Key switching characteristics include a 7ns turn-on delay and 7.6ns fall time.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Vishay IRFD214 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 450mA |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 7.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 140pF |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| Width | 6.29mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFD214 Datasheet
Download the complete datasheet for Vishay IRFD214 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.