N-channel power MOSFET with 200V drain-source voltage and 800mA continuous drain current. Features 800mΩ drain-source resistance and 1W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Through-hole mounting in a DIP package. Includes 7.2ns turn-on delay and 22ns fall time.
PackageDIP
Current Rating800mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD220 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
800mA
Current Rating
800mA
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
260pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
800mR
RoHS Compliant
No
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
200V
Width
6.29mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFD220 Datasheet
Download the complete datasheet for Vishay IRFD220 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.