N-channel, small-signal MOSFET for general-purpose applications. Features 200V drain-source breakdown voltage and 800mA continuous drain current. Offers low 800mΩ drain-source on-resistance and 260pF input capacitance. Operates within a -55°C to 150°C temperature range with 1W power dissipation. Packaged in a through-hole DIP for easy mounting. RoHS compliant.
PackageDIP
Current Rating800mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD220PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
800mA
Current Rating
800mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
200V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD220PBF Datasheet
Download the complete datasheet for Vishay IRFD220PBF to view detailed technical specifications.
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