Vishay
IRFD224
Power Field-Effect Transistor, 0.63A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
PackageDIP
MountingThrough Hole
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Technical Specifications
Vishay IRFD224 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
630mA
Drain to Source Voltage (Vdss)
250V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
260pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
1.1R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD224 Datasheet
Download the complete datasheet for Vishay IRFD224 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.