Vishay
IRFD224PBF
Power Field-Effect Transistor, 0.63A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD224PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
630mA
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
250V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
260pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.1R
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD224PBF Datasheet
Download the complete datasheet for Vishay IRFD224PBF to view detailed technical specifications.
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