N-Channel Silicon JFET, designed for high voltage applications. Features a 400V Drain-to-Source Voltage (Vdss) and a continuous drain current of 350mA. Offers a low Drain-to-Source On-Resistance (Rds On) of 3.6 Ohms. This through-hole mounted component is housed in a DIP package with a maximum power dissipation of 1W. Operating temperature range spans from -55°C to 150°C.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD310 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
350mA
Drain to Source Resistance
3.6R
Drain to Source Voltage (Vdss)
400V
Fall Time
9.9ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.6R
RoHS Compliant
No
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD310 Datasheet
Download the complete datasheet for Vishay IRFD310 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.