N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 400V drain-to-source breakdown voltage and 350mA continuous drain current. Offers a low drain-to-source resistance of 3.6 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a DIP form factor for through-hole mounting.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD310PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 6.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD310PBF Datasheet
Download the complete datasheet for Vishay IRFD310PBF to view detailed technical specifications.
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