
N-channel MOSFET transistor for through-hole mounting in a DIP package. Features 400V drain-to-source breakdown voltage and 490mA continuous drain current. Offers 1.8 Ohm Rds On (Max) and 1W power dissipation. Operates across a -55°C to 150°C temperature range. Includes 410pF input capacitance and fast switching times with 10ns turn-on and 30ns turn-off delays.
Vishay IRFD320PBF technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 490mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 410pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Width | 6.29mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFD320PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
