N-channel MOSFET transistor for through-hole mounting in a DIP package. Features 400V drain-to-source breakdown voltage and 490mA continuous drain current. Offers 1.8 Ohm Rds On (Max) and 1W power dissipation. Operates across a -55°C to 150°C temperature range. Includes 410pF input capacitance and fast switching times with 10ns turn-on and 30ns turn-off delays.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD320PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
490mA
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
410pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD320PBF Datasheet
Download the complete datasheet for Vishay IRFD320PBF to view detailed technical specifications.
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