N-Channel Power MOSFET, 500V Vdss, 370mA Continuous Drain Current, 3 Ohm Rds On. Features 8ns turn-on delay and 8.6ns fall time, with a maximum power dissipation of 1.3W. This silicon Metal-oxide Semiconductor FET is housed in a DIP package for through-hole mounting, operating from -55°C to 150°C.
PackageDIP
Current Rating460mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD420 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
370mA
Current Rating
460mA
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
500V
Fall Time
8.6ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
DC Rated Voltage
500V
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD420 Datasheet
Download the complete datasheet for Vishay IRFD420 to view detailed technical specifications.
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