P-channel silicon JFET with 50V drain-source voltage (Vdss) and 1.1A continuous drain current (ID). Features a low 350mΩ drain-to-source resistance (Rds On) and 240pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1W. This through-hole mounted component is housed in a DIP package.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9010 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.1A
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
50V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
240pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
500mR
RoHS Compliant
No
Turn-Off Delay Time
13ns
Turn-On Delay Time
6.1ns
Weight
0.022575oz
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD9010 Datasheet
Download the complete datasheet for Vishay IRFD9010 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.