P-channel, small-signal MOSFET transistor featuring a 50V drain-to-source breakdown voltage and 1.1A continuous drain current. This through-hole component offers a low Rds On of 350mR, a threshold voltage of -4V, and fast switching times with a turn-on delay of 6.1ns and fall time of 39ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. The device is housed in a 4-pin DIP package and is RoHS compliant.
PackageDIP
Current Rating-1.1A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9010PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.1A
Current Rating
-1.1A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
50V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
0.133inch
Input Capacitance
240pF
Lead Free
Lead Free
Length
0.247inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
6.1ns
DC Rated Voltage
-50V
Width
0.197inch
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9010PBF Datasheet
Download the complete datasheet for Vishay IRFD9010PBF to view detailed technical specifications.
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