P-channel MOSFET featuring 60V drain-source breakdown voltage and 1.1A continuous drain current. This through-hole component offers a low 500mΩ drain-source on-resistance and a nominal gate-source threshold voltage of -4V. Designed with a DIP package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.3W. Key switching parameters include a 10ns turn-on delay and 63ns fall time.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD9014PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 500mR |
| Dual Supply Voltage | -60V |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 7.62mm |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 11ns |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9014PBF Datasheet
Download the complete datasheet for Vishay IRFD9014PBF to view detailed technical specifications.
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