P-channel MOSFET featuring 60V drain-source breakdown voltage and 1.1A continuous drain current. This through-hole component offers a low 500mΩ drain-source on-resistance and a nominal gate-source threshold voltage of -4V. Designed with a DIP package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.3W. Key switching parameters include a 10ns turn-on delay and 63ns fall time.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD9014PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.1A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
500mR
Dual Supply Voltage
-60V
Fall Time
63ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
270pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
7.62mm
Threshold Voltage
-4V
Turn-Off Delay Time
10ns
Turn-On Delay Time
11ns
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9014PBF Datasheet
Download the complete datasheet for Vishay IRFD9014PBF to view detailed technical specifications.
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