P-channel power MOSFET featuring 60V drain-source voltage and 1.6A continuous drain current. Offers 280mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 1.3W. This through-hole component operates within a temperature range of -55°C to 175°C and has a gate-to-source voltage rating of 20V. Includes fast switching characteristics with turn-on delay time of 13ns and fall time of 68ns.
PackageDIP
Current Rating-1.6A
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFD9020 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.6A
Current Rating
-1.6A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
570pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
280mR
RoHS Compliant
No
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
DC Rated Voltage
-50V
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD9020 Datasheet
Download the complete datasheet for Vishay IRFD9020 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.