P-channel power MOSFET with a 60V drain-source breakdown voltage and 1.6A continuous drain current. Features a low 280mΩ drain-source on-resistance and a threshold voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a through-hole DIP for general-purpose power applications.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay IRFD9020PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.6A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
280mR
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
570pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
280mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9020PBF Datasheet
Download the complete datasheet for Vishay IRFD9020PBF to view detailed technical specifications.
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