IRFD9024

P-channel MOSFET transistor, designed for through-hole mounting in a DIP package. Features a continuous drain current of 1.6A and a drain-to-source voltage of -60V. Offers a low drain-to-source resistance of 280mΩ at a nominal gate-to-source voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.3W. Includes fast switching characteristics with turn-on delay time of 13ns and fall time of 68ns.