P-channel power MOSFET featuring 60V drain-source breakdown voltage and 1.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-source on-resistance and a -4V threshold voltage. Designed for through-hole mounting in a DIP package, it operates from -55°C to 175°C with a maximum power dissipation of 1.3W. Key switching characteristics include a 13ns turn-on delay and 15ns turn-off delay.
PackageDIP
Current Rating-1.6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9024PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1.6A
Current Rating
-1.6A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
280mR
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
570pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
280mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
DC Rated Voltage
-60V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9024PBF Datasheet
Download the complete datasheet for Vishay IRFD9024PBF to view detailed technical specifications.
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