P-channel power MOSFET for general-purpose applications. Features 100V drain-to-source breakdown voltage and 1.2 ohm maximum drain-source on-resistance. Continuous drain current rated at 700mA. Operates with a gate-to-source voltage up to 20V and a nominal Vgs of -4V. This RoHS compliant component is housed in a through-hole DIP package with a maximum power dissipation of 1.3W.
PackageDIP
Current Rating-700mA
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFD9110PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
700mA
Current Rating
-700mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
1.2R
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
200pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-100V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9110PBF Datasheet
Download the complete datasheet for Vishay IRFD9110PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
