P-channel power MOSFET for general-purpose applications. Features 100V drain-to-source breakdown voltage and 1.2 ohm maximum drain-source on-resistance. Continuous drain current rated at 700mA. Operates with a gate-to-source voltage up to 20V and a nominal Vgs of -4V. This RoHS compliant component is housed in a through-hole DIP package with a maximum power dissipation of 1.3W.
PackageDIP
Current Rating-700mA
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFD9110PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 700mA |
| Current Rating | -700mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -100V |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9110PBF Datasheet
Download the complete datasheet for Vishay IRFD9110PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
