The IRFD9113 is a P-channel MOSFET with a maximum drain to source voltage of 60V and continuous drain current of 600mA. It has a maximum drain to source resistance of 1.2R and a maximum power dissipation of 1W. The device is packaged in a DIP package and is mounted through a hole. It is suitable for use in a variety of applications where a P-channel MOSFET is required.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9113 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 250pF |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Rds On Max | 1.6R |
| Weight | 0.022575oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9113 Datasheet
Download the complete datasheet for Vishay IRFD9113 to view detailed technical specifications.
No datasheet is available for this part.