P-channel power MOSFET featuring 100V drain-source breakdown voltage and 1A continuous drain current. This through-hole component offers a low 600mΩ drain-source on-resistance and a maximum power dissipation of 1.3W. Operating across a wide temperature range of -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 9.6ns and fall time of 29ns. The device is housed in a DIP package and is RoHS compliant.
PackageDIP
Current Rating-1A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9120PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
1A
Current Rating
-1A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
600mR
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
390pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
-100V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFD9120PBF Datasheet
Download the complete datasheet for Vishay IRFD9120PBF to view detailed technical specifications.
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