P-channel power MOSFET featuring 100V drain-source breakdown voltage and 1A continuous drain current. This through-hole component offers a low 600mΩ drain-source on-resistance and a maximum power dissipation of 1.3W. Operating across a wide temperature range of -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 9.6ns and fall time of 29ns. The device is housed in a DIP package and is RoHS compliant.
PackageDIP
Current Rating-1A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9120PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.37mm |
| Input Capacitance | 390pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.6ns |
| DC Rated Voltage | -100V |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9120PBF Datasheet
Download the complete datasheet for Vishay IRFD9120PBF to view detailed technical specifications.
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