P-channel Silicon JFET transistor featuring a 200V Drain-to-Source Voltage (Vdss) and 400mA Continuous Drain Current (ID). This single-element, metal-oxide semiconductor field-effect transistor offers a low Drain to Source Resistance (Rds On) of 3 Ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. The component is housed in a DIP package suitable for through-hole mounting, with dimensions of 5mm length, 6.29mm width, and 3.37mm height.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD9210 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
400mA
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
200V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
3.37mm
Input Capacitance
170pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
3R
RoHS Compliant
No
Turn-Off Delay Time
11ns
Turn-On Delay Time
8ns
Width
6.29mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFD9210 Datasheet
Download the complete datasheet for Vishay IRFD9210 to view detailed technical specifications.
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