P-channel silicon JFET with 200V drain-source breakdown voltage and 400mA continuous drain current. Features 3 Ohm drain-source on-resistance, 170pF input capacitance, and a threshold voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with 1W maximum power dissipation. Through-hole mounting in a DIP package, this RoHS compliant field-effect transistor offers fast switching with turn-on delay of 8ns and fall time of 12ns.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Vishay IRFD9210PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 170pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9210PBF Datasheet
Download the complete datasheet for Vishay IRFD9210PBF to view detailed technical specifications.
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