P-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for through-hole mounting. Features a 200V Drain-to-Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 560mA. Offers a low Drain-to-Source On-Resistance (Rds On) of 1.5 Ohms. Includes fast switching characteristics with a turn-on delay time of 8.8ns and a fall time of 19ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This component is RoHS compliant.
PackageDIP
Current Rating-560mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFD9220PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 560mA |
| Current Rating | -560mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.133inch |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 0.247inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 8.8ns |
| DC Rated Voltage | -200V |
| Width | 0.197inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFD9220PBF Datasheet
Download the complete datasheet for Vishay IRFD9220PBF to view detailed technical specifications.
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