N-channel MOSFET with 600V drain-source breakdown voltage and 320mA continuous drain current. Features 4.4 Ohm drain-source on-resistance, 10V nominal gate-source voltage, and 4V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a 4-pin DIP for through-hole mounting, this RoHS compliant component offers fast switching with turn-on delay time of 10ns and fall time of 23ns.
PackageDIP
Current Rating320mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFDC20PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
320mA
Current Rating
320mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
4.4R
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
0.133inch
Input Capacitance
350pF
Lead Free
Lead Free
Length
0.247inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Nominal Vgs
10V
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
4.4R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
600V
Width
0.197inch
Compliance
RoHS
Compliant
Datasheet
Vishay IRFDC20PBF Datasheet
Download the complete datasheet for Vishay IRFDC20PBF to view detailed technical specifications.
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