N-Channel Power MOSFET with 100V Drain-Source Voltage (Vdss) and 4.5A Continuous Drain Current (ID). Features 0.54ohm Drain-Source On-Resistance (Rds On Max) and 27W Max Power Dissipation. This silicon Metal-Oxide Semiconductor FET is housed in a TO-220AB package for through-hole mounting. Operates from -55°C to 175°C with a Gate-Source Voltage (Vgs) of 20V. Includes input capacitance of 180pF and switching times like 6.9ns turn-on delay and 9.4ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFI510G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFI510G Datasheet
Download the complete datasheet for Vishay IRFI510G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.