N-Channel Power MOSFET featuring 100V drain-source voltage and 7.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.27-ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 37W. Key switching parameters include a 20ns fall time, 19ns turn-off delay, and 8.8ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI520G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.2A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
37W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
270mR
RoHS Compliant
No
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.8ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI520G Datasheet
Download the complete datasheet for Vishay IRFI520G to view detailed technical specifications.
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