N-Channel Power MOSFET with 100V drain-source voltage and 9.7A continuous drain current. Features 0.16ohm drain-to-source resistance and 42W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount configuration. Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 25ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI530G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9.7A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
670pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
No
Turn-Off Delay Time
34ns
Turn-On Delay Time
8.5ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI530G Datasheet
Download the complete datasheet for Vishay IRFI530G to view detailed technical specifications.
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