N-Channel Power MOSFET featuring 100V drain-source voltage and 9.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.16ohm drain-source resistance and operates efficiently with a 20V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 42W and a wide operating temperature range from -55°C to 175°C. This RoHS compliant component is ideal for power switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI530GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI530GPBF Datasheet
Download the complete datasheet for Vishay IRFI530GPBF to view detailed technical specifications.
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