N-Channel Power MOSFET featuring 100V drain-source voltage and 9.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.16ohm drain-source resistance and operates efficiently with a 20V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 42W and a wide operating temperature range from -55°C to 175°C. This RoHS compliant component is ideal for power switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI530GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9.7A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
670pF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
Yes
Turn-Off Delay Time
34ns
Turn-On Delay Time
8.5ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI530GPBF Datasheet
Download the complete datasheet for Vishay IRFI530GPBF to view detailed technical specifications.
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