N-Channel Power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 77mΩ drain-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 48W. Key switching characteristics include an 11ns turn-on delay and a 43ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
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Technical Specifications
Vishay IRFI540G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Fall Time
43ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.7nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
77mR
RoHS Compliant
No
Turn-Off Delay Time
53ns
Turn-On Delay Time
11ns
DC Rated Voltage
100V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI540G Datasheet
Download the complete datasheet for Vishay IRFI540G to view detailed technical specifications.
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