N-Channel Power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. Offers a low 77mΩ drain-source on-resistance for efficient power switching. Designed for through-hole mounting in a TO-220-3 package, this silicon FET operates from -55°C to 175°C with a maximum power dissipation of 48W. Key switching characteristics include a 11ns turn-on delay and 43ns fall time, with a 4V threshold voltage.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI540GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 77mR |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.7nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI540GPBF Datasheet
Download the complete datasheet for Vishay IRFI540GPBF to view detailed technical specifications.
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