N-Channel Power MOSFET, featuring a 250V drain-source voltage and 2.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 2-ohm drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 23W. Key switching characteristics include a 7ns turn-on delay and a 7ns fall time.
PackageTO-220-3
Current Rating2.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI614G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.1A
Current Rating
2.1A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
23W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
250V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI614G Datasheet
Download the complete datasheet for Vishay IRFI614G to view detailed technical specifications.
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