N-Channel Power MOSFET, 250V Drain-Source Voltage, 2.1A Continuous Drain Current, and 2 Ohm On-State Resistance. Features include a 7ns turn-on delay, 16ns turn-off delay, and 140pF input capacitance. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-220AB package with through-hole mounting. It operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 23W. RoHS compliant.
PackageTO-220-3
Resistance2kR
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI614GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.1A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
250V
Dual Supply Voltage
250V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
23W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
On-State Resistance
2kR
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
Resistance
2kR
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI614GPBF Datasheet
Download the complete datasheet for Vishay IRFI614GPBF to view detailed technical specifications.
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