IRFI620G

N-Channel Power MOSFET featuring 200V Drain-Source Voltage (Vdss) and 4.1A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers 800mΩ Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 30W. Designed for through-hole mounting in a TO-220AB plastic package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.