Vishay
IRFI624GPBF
Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Vishay IRFI624GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.4A
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
1.1R
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
260pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Rds On Max
1.1R
RoHS Compliant
No
Turn-Off Delay Time
20ns
Turn-On Delay Time
7ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFI624GPBF Datasheet
Download the complete datasheet for Vishay IRFI624GPBF to view detailed technical specifications.
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