N-Channel Power MOSFET, 250V Vdss, 5.6A Continuous Drain Current, and 0.45 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 1-element configuration, and a maximum power dissipation of 35W. Operating temperature range is -55°C to 150°C, with a threshold voltage of 2V and input capacitance of 770pF. Turn-on delay is 9.6ns, fall time is 19ns, and turn-off delay is 42ns. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI634GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.6A
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
250V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
770pF
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
42ns
Turn-On Delay Time
9.6ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI634GPBF Datasheet
Download the complete datasheet for Vishay IRFI634GPBF to view detailed technical specifications.
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