N-Channel Power MOSFET, TO-220-3 package, featuring 200V drain-source breakdown voltage and 9.8A continuous drain current. Offers a low 180mΩ drain-source on-resistance and 40W maximum power dissipation. Designed for through-hole mounting with a threshold voltage of 4V and fast switching times including 14ns turn-on delay and 36ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFI640GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9.8A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
180mR
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.3nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI640GPBF Datasheet
Download the complete datasheet for Vishay IRFI640GPBF to view detailed technical specifications.
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