N-Channel Power MOSFET, TO-220-3 package, featuring 200V drain-source breakdown voltage and 9.8A continuous drain current. Offers a low 180mΩ drain-source on-resistance and 40W maximum power dissipation. Designed for through-hole mounting with a threshold voltage of 4V and fast switching times including 14ns turn-on delay and 36ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFI640GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.3nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI640GPBF Datasheet
Download the complete datasheet for Vishay IRFI640GPBF to view detailed technical specifications.
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