N-Channel Power MOSFET, designed for high-performance switching applications. Features a 250V drain-source breakdown voltage and a continuous drain current of 7.9A. Offers a low on-resistance of 280mΩ at a nominal gate-source voltage of 4V. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 40W.
PackageTO-220-3
Current Rating7.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI644GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.9A |
| Current Rating | 7.9A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 250V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI644GPBF Datasheet
Download the complete datasheet for Vishay IRFI644GPBF to view detailed technical specifications.
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