N-Channel Power MOSFET featuring 400V drain-source voltage and 2.6A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 1.8-ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Key switching characteristics include a 10ns turn-on delay and 13ns fall time.
Vishay IRFI720G technical specifications.
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