N-Channel Power MOSFET featuring 400V drain-source voltage and 2.6A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 1.8-ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Key switching characteristics include a 10ns turn-on delay and 13ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI720G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
400V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
410pF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.8R
RoHS Compliant
No
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRFI720G Datasheet
Download the complete datasheet for Vishay IRFI720G to view detailed technical specifications.
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