N-Channel Power MOSFET featuring 400V drain-source voltage and 5.7A continuous drain current. Offers a low 0.55ohm drain-source on-resistance and operates within a -55°C to 150°C temperature range. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB package with through-hole mounting. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 20ns. RoHS compliant and lead-free.
Vishay IRFI740GLCPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 550mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRFI740GLCPBF to view detailed technical specifications.
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