N-Channel Power MOSFET with 400V Drain-Source Breakdown Voltage and 5.4A Continuous Drain Current. Features 0.55ohm maximum Drain-Source On-Resistance and 40W maximum power dissipation. Operates with a 4V threshold voltage and 20V gate-source voltage. Packaged in a TO-220AB through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Vishay IRFI740GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.4A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
550mR
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.37nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
54ns
Turn-On Delay Time
14ns
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI740GPBF Datasheet
Download the complete datasheet for Vishay IRFI740GPBF to view detailed technical specifications.
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