N-Channel Power MOSFET featuring 450V drain-source voltage and 4.9A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.63 ohm drain-to-source resistance and a maximum power dissipation of 40W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include an 8.7ns turn-on delay and a 27ns fall time.
PackageTO-220-3
Current Rating4.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI744G technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.9A
Current Rating
4.9A
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
450V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.4nF
Lead Free
Contains Lead
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
630mR
RoHS Compliant
No
Turn-Off Delay Time
58ns
Turn-On Delay Time
8.7ns
DC Rated Voltage
450V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFI744G Datasheet
Download the complete datasheet for Vishay IRFI744G to view detailed technical specifications.
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