N-Channel Power MOSFET featuring 450V drain-source voltage and 4.9A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.63 ohm drain-to-source resistance and a maximum power dissipation of 40W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include an 8.7ns turn-on delay and a 27ns fall time.
PackageTO-220-3
Current Rating4.9A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFI744G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | 4.9A |
| Drain to Source Resistance | 630mR |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 630mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 8.7ns |
| DC Rated Voltage | 450V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFI744G Datasheet
Download the complete datasheet for Vishay IRFI744G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
